Examination of the Hydrogen Incorporation into Radio Frequency-Sputtered Hydrogenated SiNx Thin Films

In this work, amorphous hydrogen-free silicon nitride (a-SiNx) and hydrogenated (a-SiNx:H) films were deposited by radio frequency (RF) sputtering applying various amounts of hydrogen gas. Structural optical properties investigated as a function concentration. The refractive index 1.96 was characteristic for SiNx thin film with increasing H2 flow it decreased to 1.89. hydrogenation during the process affected porosity compared SiNx. A higher is consistent lower index. Fourier-transform infrared spectroscopy (FTIR) confirmed presence 4 at.% bounded hydrogen, while elastic recoil detection analysis (ERDA) that 6 incorporated growing mechanism. molecular form released at temperature ~65 °C from after annealing, blisters 100 nm diameter created on surface. low activation energy deduced Arrhenius method indicated diffusion molecules.